STW26NM60ND Overview
Key Specifications
Package: TO-247-3
Mount Type: Through Hole
Pins: 3
Height: 20.15 mm
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance.
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities ' 7$%
