STW26NM60ND Datasheet and Specifications PDF

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolution.

Order codes VDS @ Tjmax RDS(on) max ID STB26NM60ND STF26NM60ND STP26NM60ND 650 V 0.175 21 A STW26NM60ND
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high dv/dt and avalanche capabilities '7$% Applications
* Switching applicatio.

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Con.

*Drain Current
*ID=21A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*Swi.