STW33N60DM2 Datasheet | STMicroelectronics

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 110 mΩ typ., 24 A MDmesh DM2 Power MOSFET in D²PAK, TO‑220 and TO‑247 packages 3 1 D2PAK TO-220 1 23 TO-247 3 2 1 D(2, TAB) G(1) Features Order code VDS @ TJmax. STB33N60DM2 STP33N60DM2 650 V - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected RDS(on) max. 130 mΩ ID 24 A Applications S(3) - Switching applications AM01476v1_tab Description These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) bined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift...