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STW33N60M6 - N-CHANNEL POWER MOSFET

General Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Key Features

  • Order code VDS STW33N60M6 600 V.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 125 mΩ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW33N60M6 Datasheet N-channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-247 package 3 2 1 TO-247 D(2) G(1) Features Order code VDS STW33N60M6 600 V • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected RDS(on) max. 125 mΩ Applications • Switching applications • LLC converters • Boost PFC converters ID 25 A S(3) AM15572v1_no_tab Product status link STW33N60M6 Product summary Order code STW33N60M6 Marking 33N60M6 Package TO-247 Packing Tube Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.