STW45N60DM6 Datasheet | STMicroelectronics

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 Ω typ., 30 A MDmesh™ DM6 Power MOSFETs in TO-220 and TO-247 packages - production data TAB Features Order code RDS(on) max. STP45N60DM6 STW45N60DM6 600 V 0.099 Ω 30 A 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram - Fast-recovery body diode - Lower RDS(on) x area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications Order code STP45N60DM6 STW45N60DM6 Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) - area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phaseshift converters. Table 1: Device summary Marking Package Packing...