STMicroelectronics STW70N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- AM01476v1_tab recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STW70N60DM2 |
|---|---|
| Datasheet | STW70N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 66A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
3 2 1 TO-247 D(2, TAB) G(1) Order code VDS RDS(on) max. ID STW70N60DM2 600 V 42 mΩ 66 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications PTOT 446 WDESCRIPTION
S(3) Product status link STW70N60DM2 Product summary Order code STW70N60DM2 Marking 70N60DM2 Package TO-247 Packing Tube DS10558 - Rev 6 - October 2025 For further information, contact your local STMicroelectronics sales office. STW70N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area.
