Datasheet4U Logo Datasheet4U.com

STW70N60DM6 - N-CHANNEL Power MOSFET

General Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Key Features

  • 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 62 A G(1).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW75N15 N-CHANNEL MOSFET ST Microelectronics
STW77N65M5 N-Channel MOSFET INCHANGE
STW7N95K3 N-Channel 900V Power MOSFET VBsemi
STW7NA100 N-CHANNEL MOSFET ST Microelectronics
STW7NA100FI N-CHANNEL MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW70N60DM6-4 N-channel Power MOSFET
STW70N60DM2 N-CHANNEL MOSFET
STW70N60M2 N-CHANNEL MOSFET
STW70N65DM6 N-channel Power MOSFET
STW70N65DM6-4 N-channel 650V 68A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO‑247 and TO‑247 long leads packages Features 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 62 A G(1) Applications • Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.