Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Features
- Gate(4)
Driver source (3)
2 34 1 TO247-4 Drain(1, TAB)
Order code
VDS
RDS(on) max. ID
STW70N65DM6-4
650 V
40 mΩ
68 A.
- Fast-recovery body diode.
- Lower RDS(on) per area vs previous generation.
- Low gate charge, input capacitance and resistance.
- 100% avalanche tested.
- Extremely high dv/dt ruggedness.
- Zener-protected.
- Excellent switching performance thanks to the extra driving source pin.
STW70N65DM6-4 Datasheet
