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STW70N65DM6-4 - N-channel 650V 68A Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Order code VDS RDS(on) max. ID STW70N65DM6-4 650 V 40 mΩ 68 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW70N65DM6-4 Datasheet N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET in a TO247‑4 package Features Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Order code VDS RDS(on) max. ID STW70N65DM6-4 650 V 40 mΩ 68 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Applications Power source (2) AM10177v2Z • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.