STMicroelectronics STW70N60DM6-4
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.| Part No. | STW70N60DM6-4 |
|---|---|
| Datasheet | STW70N60DM6-4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 62A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB) Order code VDS RDS(on) max. ID STW70N60DM6-4 600 V 42 mΩ 62 A● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
● Excellent switching performance thanks to the extra driving source pin
APPLICATIONS
Power source (2) AM10177v2Z● Switching applications
DESCRIPTION
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW70N60DM6-4 Product summary Order code STW70N60DM6-4 Marking 70N60DM6 Package TO247-4 Packing Tube DS12995 - Rev 4 - February 2026 For further information, contact your local STMicroelectronics sales office.
