Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
Features
- Gate(4)
Driver source (3)
2 34 1 TO247-4 Drain(1, TAB)
Order code
VDS
RDS(on) max. ID
STW70N60DM6-4
600 V
42 mΩ
62 A.
- Fast-recovery body diode.
- Lower RDS(on) per area vs previous generation.
- Low gate charge, input capacitance and resistance.
- 100% avalanche tested.
- Extremely high dv/dt ruggedness.
- Zener-protected.
- Excellent switching performance thanks to the extra driving source pin
Power source (2)
AM10177v2Z
Applicatio.
STW70N60DM6-4 Datasheet
