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STW7N105K5 - N-channel Power MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data TAB TO-220 TAB 3 2 1 IPAK 3 2 1 TO-247 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.