STW7N105K5 Datasheet | STMicroelectronics

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFETs in TO-220, IPAK and TO-247 packages - production data TAB TO-220 3 2 1 IPAK 3 2 1 TO-247 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP7N105K5 STU7N105K5 STW7N105K5 AM01476v1 Table 1: Device...