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STWA50N65DM2AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STWA50N65DM2AG Automotive-grade N-channel 650 V, 0.070 Ω typ.

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

AM01476v1_No_tab Table 1: Device summary Marking Package Packing 50N65DM2 TO-247 long leads Tube The HTRB test was performed at 80% V(BR)DSS in compliance with AEC-Q101 rev.

Key Features

  • Order code STWA50N65DM2AG VDS 650 V RDS(on) max. 0.087 Ω ID 38 A PTOT 300 W Figure 1: Internal schematic diagram D(2).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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STWA50N65DM2AG Distributor