STMicroelectronics TMBAT49
This device has integrated protection against excessive voltage such as electrostatic discharges.| Part No. | TMBAT49 |
|---|---|
| Datasheet | TMBAT49 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
| Buy | Stock & Price |
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching.ABSOLUTE MAXIMUM RATINGS
(limiting values) Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 70 °C tp = 1s δ ≤ 0.5 tp = 10ms MELF (Glass) Value 80 500 3 10 - 65 to + 150 - 65 to + 125 260 Unit V mA A A °C °C °C THERMAL RESISTANCE Symbol Rth(j-l) Junction-leads Test Conditions Value 110 Unit °C/WELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol IR * VF * Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Test Conditions VR = 80V IF = 10mA IF = 100mA IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit µA V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions f = 1MHz VR = 0V VR = 5V * Pulse test: tp ≤ 300µs δ < 2%. Min. Typ. 120 35 Max. Unit pF August 1999 Ed 1A 1/4 TMBAT 49 Figure 1.
