TMBAT49
TMBAT49 is SMALL SIGNAL SCHOTTKY DIODE manufactured by STMicroelectronics.
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 70 °C tp = 1s δ ≤ 0.5 tp = 10ms
MELF (Glass)
Value 80 500 3 10
- 65 to + 150
- 65 to + 125 260
Unit V m A A A °C °C °C
THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 110 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol IR
- VF
- Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Test Conditions VR = 80V IF = 10m A IF = 100m A IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit µA V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test Conditions f = 1MHz VR = 0V VR = 5V
- Pulse test: tp ≤ 300µs δ < 2%.
Min.
Typ. 120 35
Max.
Unit p F
August 1999 Ed 1A
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TMBAT 49
Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Reverse current versus VRRM in per cent.
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TMBAT 49
Figure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms.
Figure 7.
- Surge non repetitive forward current versus number of cycles.
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TMBAT 49
PACKAGE MECHANICAL DATA MELF Glass
DIMENSIONS
REF.
Millimeters Min. Typ. Max. 5.20 2.65 0.60 2.50 Min. 0.189 0.098 0.018
Inches Typ. Max. 0.205 0.104 0.024...
