TMBYV10-60 Datasheet | STMicroelectronics

DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. MELF (Glass) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM IF (AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current Surge non Repetitive Forward Current Ti = 25 °C Ti = 25 °C tp = 10ms Ti = 25 °C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 15s Value 60 1 20 Sinusoidal Pulse 40 Rectangular Pulse - 65 to + 150 - 65 to + 125 260 °C °C °C Unit V A A THERMAL RESISTANCE Symbol Rth (j - l) Junction-leads Parameter Value 110 Unit °C/W August 1999 Ed: 1A 1/5 TMBYV 10-60 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR- Tj = 25°C Tj = 100°C VF- IF = 1A IF = 3A - Pulse test: tp ≤ 300µs δ < 2%. Test Conditions VR = VRRM Min. Typ. Max. 0.5 10 Unit m A Tj = 25°C 0.7 1 DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Tj = 25°C Test Conditions VR = 0 VR = 5V Min. Typ. 150 40 Max. Unit p F Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes. Nevertheless, when the device switches from forward biased condition to reverse blocking state, current is required to charge the depletion capacitance of the diode. This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that Schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). 2/5 TMBYV 10-60 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values). Figure 3. Reverse current versus junction temperature. Fi...