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TSD2931-10 - RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

General Description

The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor.

Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA ν ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES M174 epoxy sealed ORDER CODE BRANDING SD2931-10 TSD2931-10 DESCRIPTION The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications. PIN CONNECTION 1. Drain 2.