STMicroelectronics TSD2931-10
The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications.| Part No. | TSD2931-10 |
|---|---|
| Datasheet | TSD2931-10 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs |
| Buy | Stock & Price |
DESCRIPTION
Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz. PIN CONNECTION 1. Drain 2. SourceABSOLUTE MAXIMUM RATINGS
(Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 125 125 ± 20 20 389 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 0.45 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/10 SD2931-10 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) G FS C ISS C OSS C RSS * Parameter V GS = 0V V GS = 0V V GS = 20V VDS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V I DS = 100 mA V DS = 50 V V DS = 0 V I D = 250 mA ID = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz Min.
