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VNN1NV04 Datasheet Fully Autoprotected Power MOSFET

Manufacturer: STMicroelectronics

Overview: ® VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 VNN1NV04 VNS1NV04 RDS(on) 250 mΩ Ilim 1.7 A Vclamp 2 40 V 1 2 3 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT SOT-223 SO-8 3 1 TO-252 (DPAK) PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE ORDER CODES: TO-252 (DPAK) SOT-223 SO-8 VND1NV04 VNN1NV04 VNS1NV04 POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET www.DataSheet4U.

General Description

The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power BLOCK DIAGRAM MOSFETS from DC up to 50KHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Key Features

  • During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: -.

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VNN1NV04 Distributor