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VNN1NV04P-E - fully autoprotected Power MOSFET

General Description

The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Key Features

  • Parameter Symbol Value Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard P.

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VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the Power MOSFET (analog driving) • Compatible with standard Power MOSFET 2 3 2 1 SOT-223 SO-8 Description The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.