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VNN1NV04P-E Datasheet Fully Autoprotected Power MOSFET

Manufacturer: STMicroelectronics

Overview: VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power.

General Description

The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Key Features

  • Parameter Symbol Value Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 mī— 1.7 A 40 V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the Power MOSFET (analog driving).
  • Compatible with standard P.

More Datasheets from STMicroelectronics

Part Number Description
VNN1NV04 fully autoprotected Power MOSFET
VNN3NV04 FULLY AUTOPROTECTED POWER MOSFET
VNN3NV04P-E fully autoprotected Power MOSFET
VNN7NV04 FULLY AUTOPROTECTED POWER MOSFET
VNN7NV04P-E OMNIFET II fully autoprotected Power MOSFET
VNN7NV04PTR-E OMNIFET II fully autoprotected Power MOSFET

VNN1NV04P-E Distributor