VNN1NV04P-E
VNN1NV04P-E is fully autoprotected Power MOSFET manufactured by STMicroelectronics.
VNN1NV04P-E, VNS1NV04P-E
OMNIFET II fully autoprotected Power MOSFET
Features
Parameter
Symbol Value
Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage
RON ILIMH VCLAMP
250 m 1.7 A 40 V
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power
MOSFET (analog driving)
- patible with standard Power MOSFET
3 2 1
SOT-223
SO-8
Description
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of...
