VNN1NV04P-E - fully autoprotected Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	VNN1NV04P-E
Manufacturer	STMicroelectronics
File Size	460.74 KB
Description	fully autoprotected Power MOSFET
Datasheet	VNN1NV04P-E Datasheet
Additional preview pages of the VNN1NV04P-E datasheet.

Product details

Description

The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Features

Parameter Symbol Value Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V.
Linear current limitation.
Thermal shutdown.
Short circuit protection.
Integrated clamp.
Low current drawn from input pin.
Diagnostic feedback through input pin.
ESD protection.
Direct access to the gate of the Power MOSFET (analog driving).
Compatible with standard P.

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Published: Apr 14, 2020 |