Description
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.
Features
- Parameter
Symbol Value
Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage
RON ILIMH VCLAMP
250 mī 1.7 A 40 V.
- Linear current limitation.
- Thermal shutdown.
- Short circuit protection.
- Integrated clamp.
- Low current drawn from input pin.
- Diagnostic feedback through input pin.
- ESD protection.
- Direct access to the gate of the Power
MOSFET (analog driving).
- Compatible with standard P.
VNN1NV04P-E Datasheet
