W20NK50Z Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE July 2003 1/7 Free Datasheet http://../ STP20NK50Z - STW20NK50Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter STP20NK50Z Value STW20NK50Z Unit V V V 20 10 64 190 1.51 A A A W W/°C V V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 20 10 64 190 1.51 500 500 ± 30 4000 4.5 -55 to 150 -55 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.66 62.5 300 TO-247 0.66 50 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 20 TBD Unit A m J GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage...