W20NM50
W20NM50 is STW20NM50 manufactured by STMicroelectronics.
DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the pany’s Power MESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent
- avalanche characteristics. The adoption of the ) pany’s proprietary strip technique yields overall t(s dynamic performance that is significantly better than that of similar petition’s products. duc APPLICATIONS ro The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing
P system miniaturization and higher efficiencies.
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
Obsolete ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Gate- source Voltage
±30
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
W/°C dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(- )Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
February 2004
- 65 to 150
V/ns °C...
