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W20NM50 - STW20NM50

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Description

le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout.

The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics.

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Datasheet Details

Part number W20NM50
Manufacturer STMicroelectronics
File Size 178.22 KB
Description STW20NM50
Datasheet download datasheet W20NM50 Datasheet
Additional preview pages of the W20NM50 datasheet.

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Full PDF Text Transcription

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STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES t(s) 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE uc CHARGE d LOW GATE INPUT RESISTANCE ro TIGHT PROCESS CONTROL AND HIGH P MANUFACTURING YIELDS te DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics.
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