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XSD56120 - RF POWER TRANSISTORS RF POWER TRANSISTORS

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Description

The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V.

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Datasheet Details

Part number XSD56120
Manufacturer STMicroelectronics
File Size 43.95 KB
Description RF POWER TRANSISTORS RF POWER TRANSISTORS
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® SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz BeO FREE PACKAGE s s s M246 epoxy sealed ORDER CODE SD56120 BRANDING XSD56120 s DESCRIPTION The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. PIN CONNECTION 1. Drain 2. Drain 3.
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