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FLM7785-8F - C-Band Internally Matched FET

General Description

The FLM7785-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 39.5dBm (Typ. ) High Gain: G1dB = 8.5dB (Typ. ) High PAE: ηadd = 34% (Typ. ) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed.

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Datasheet Details

Part number FLM7785-8F
Manufacturer SUMITOMO
File Size 249.15 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM7785-8F Datasheet

Full PDF Text Transcription for FLM7785-8F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLM7785-8F. For precise diagrams, and layout, please refer to the original PDF.

FLM7785-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM...

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yp.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch T

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