SPC1016 Datasheet | SYNC POWER

N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC1016 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V - P-Channel -20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOT-563 (SC-89-6L) package design PIN CONFIGURATION (SOT-563 / SC-89-6L) PART MARKING 2020/04/16 Ver.3 Page 1 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPC1016S56RGB SOT-563...