SPC1018 Description
The SPC1018 is the N- and P-Dual Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits...
SPC1018 Key Features
- N-Channel
- P-Channel -20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- ESD protected
- SOT-563 (SC-89-6L) package design
SPC1018 Applications
- Power Management in Note book