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SPC4533 - N & P Pair MOSFET

General Description

The SPC4533 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • N-Channel 30V/8.0A,RDS(ON)=18Ω@VGS=10V 30V/6.0A,RDS(ON)=36mΩ@VGS=4.5V.
  • P-Channel -30V/-6.0A,RDS(ON)=36mΩ@VGS=-10V -30V/-4.0A,RDS(ON)=65mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

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Datasheet Details

Part number SPC4533
Manufacturer SYNC POWER
File Size 487.71 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC4533 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4533 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. FEATURES  N-Channel 30V/8.0A,RDS(ON)=18Ω@VGS=10V 30V/6.0A,RDS(ON)=36mΩ@VGS=4.5V  P-Channel -30V/-6.0A,RDS(ON)=36mΩ@VGS=-10V -30V/-4.0A,RDS(ON)=65mΩ@VGS=-4.