SPC4539B Description
The SPC4539B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits...
SPC4539B Key Features
- N-Channel
- P-Channel -30V/-6.2A,RDS(ON)=70mΩ@VGS=-10V -30V/-4.8A,RDS(ON)=100mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
SPC4539B Applications
- Power Management in Note book