SPC4567 Description
The SPC4567 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where...
SPC4567 Key Features
- 40V/6.0A,RDS(ON)=53mΩ@VGS=10V
- 40V/5.0A,RDS(ON)=63mΩ@VGS=4.5V
- 40V/4.5A,RDS(ON)=78mΩ@VGS=2.5V P-Channel
- 40V/-7.2A,RDS(ON)=95mΩ@VGS=-10V
- 40V/-5.0A,RDS(ON)=110mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design
SPC4567 Applications
- Power Management in Note book