SPC4567W Overview
Description
The SPC4567W is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- 40V/6.0A,RDS(ON)=53mΩ@VGS=10V
- 40V/5.0A,RDS(ON)=63mΩ@VGS=4.5V
- 40V/4.5A,RDS(ON)=78mΩ@VGS=2.5V P-Channel
- 40V/-7.2A,RDS(ON)=95mΩ@VGS=-10V
- 40V/-5.0A,RDS(ON)=130mΩ@VGS=-4.5V
