SPC4567W Datasheet | SYNC POWER

N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4567W is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features N-Channel - 40V/6.0A,RDS(ON)=53mΩ@VGS=10V - 40V/5.0A,RDS(ON)=63mΩ@VGS=4.5V - 40V/4.5A,RDS(ON)=78mΩ@VGS=2.5V P-Channel - -40V/-7.2A,RDS(ON)=95mΩ@VGS=-10V - -40V/-5.0A,RDS(ON)=130mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP- 8 package design PIN CONFIGURATION(SOP- 8) PART MARKING 2022/06/06 Ver.3 Page 1 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING...