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SPN1380 - N-Channel MOSFET

Description

The SPN1380 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 50V/0.50A , RDS(ON)=1.6Ω@VGS=10V.
  • 50V/0.20A , RDS(ON)=2.5Ω@VGS=4.5V.
  • 50V/0.10A , RDS(ON)=4.5Ω@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-23 package design PIN.

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Datasheet Details

Part number SPN1380
Manufacturer SYNC POWER
File Size 419.33 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN1380 Datasheet

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Full PDF Text Transcription

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SPN1380 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1380 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 800mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.
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