SPN1380 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1380 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300m A DC and can deliver pulsed currents up to 800m A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS - Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. - High saturation current capability. Direct Logic-Level Interface: TTL/CMOS - Battery Operated Systems - Solid-State Relays Features - 50V/0.50A , RDS(ON)=1.6Ω@VGS=10V - 50V/0.20A , RDS(ON)=2.5Ω@VGS=4.5V - 50V/0.10A , RDS(ON)=4.5Ω@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - ESD protected - SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2020/1/16 Ver.2 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN1380S23RGB...