SPN4946 - N-Channel MOSFET

Description

The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

60V/12A,RDS(ON)=45mΩ@VGS=10V.
60V/ 8A,RDS(ON)=50mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOP.
8 package design.

SYNC POWER

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Datasheet Details

Part number	SPN4946
Manufacturer	SYNC POWER
File Size	476.62 KB
Description	N-Channel MOSFET
Datasheet	SPN4946 Datasheet
Additional preview pages of the SPN4946 datasheet.

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Full PDF Text Transcription

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SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  60V/12A,RDS(ON)=45mΩ@VGS=10V  60V/ 8A,RDS(ON)=50mΩ@VGS=4.

Published: Oct 15, 2009 |