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SPN4946 - N-Channel MOSFET

General Description

The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/12A,RDS(ON)=45mΩ@VGS=10V.
  • 60V/ 8A,RDS(ON)=50mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

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Datasheet Details

Part number SPN4946
Manufacturer SYNC POWER
File Size 476.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4946 Datasheet

Full PDF Text Transcription for SPN4946 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN4946. For precise diagrams, and layout, please refer to the original PDF.

SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell...

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ement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  60V/12A,RDS(ON)=45mΩ@VGS=10V  60V/ 8A,RDS(ON)=50mΩ@VGS=4.

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