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SPN4946W - N-Channel MOSFET

General Description

The SPN4946W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/ 10A,RDS(ON)=42mΩ@VGS=10V.
  • 60V/ 6A,RDS(ON)=48mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet Details

Part number SPN4946W
Manufacturer SYNC POWER
File Size 473.09 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4946W Datasheet

Full PDF Text Transcription for SPN4946W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN4946W. For precise diagrams, and layout, please refer to the original PDF.

SPN4946W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high ce...

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ncement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  60V/ 10A,RDS(ON)=42mΩ@VGS=10V  60V/ 6A,RDS(ON)=48mΩ@VGS=4.