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SPN80N10 - N-Channel Enhancement Mode MOSFET

General Description

APPLICATIONS The SPN80N10 is the N-Channel enhancement mode

power field effect transistor which is produced using super high cell density DMOS trench technology.

Load Switch UPS

Key Features

  • 100V/84A, RDS(ON)=8mΩ@VGS=10V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-252-2L/TO-262-3L/TO- 263-2L/PPAK5x6-8L package design 2023/9/20 Ver 7 Page 1 SPN80N10 N-Channel Enhancement Mode MOSFET PIN.

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Datasheet Details

Part number SPN80N10
Manufacturer SYNC POWER
File Size 323.50 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN80N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN80N10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN80N10 is the N-Channel enhancement mode  AC/DC Synchronous Rectifier power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN80N10 has been designed specifically to improve the overall  Load Switch  UPS  Motor Control  Power Tool efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.