SPN80N10A Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN80N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, split gate DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching is required. APPLICATIONS - DC/DC Converter - Load Switch - Synchronous Buck Converter - SMPS Secondary Side Synchronous Rectifier - Power Tool - Motor Control 　 Features - 100V/74A,RDS(ON)=8.0mΩ@VGS=10V - 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TO-252-2L package design PIN CONFIGURATION(TO-252-2L) TO-252-2L PART MARKING 2024/07/05 Ver 2 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN80N10AT220TGB Package TO-220-3L SPN80N10AT252RGB TO-252-2L...