SPN80N10A Overview
The SPN80N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, split gate DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching is required.
SPN80N10A Key Features
- 100V/74A,RDS(ON)=8.0mΩ@VGS=10V
- 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-252-2L package design