SPN8205W Datasheet | SYNC POWER

SPN8205W 6mon-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8205W is the mon-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 20V/5.0A,RDS(ON)=24mΩ@VGS=4.5V - 20V/3.0A,RDS(ON)=34mΩ@VGS=2.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TSSOP- 8...