Datasheet Summary
SPN8206 6mon-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION The SPN8206 is the mon-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
Features
- 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V
- 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V
- Super high density cell design for extremely low
RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- ESD capability...