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SPN8206 - Common-Drain Dual N-Channel MOSFET

General Description

The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V.
  • 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD capability 2KV.
  • TDFN2x3-6L package design.

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Datasheet Details

Part number SPN8206
Manufacturer SYNC POWER
File Size 540.09 KB
Description Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet SPN8206 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN8206 6Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. FEATURES  20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V  20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.