SPN8206 - Common-Drain Dual N-Channel MOSFET

Product Overview

SYNC POWER

Datasheet Details

Part number	SPN8206
Manufacturer	SYNC POWER
File Size	540.09 KB
Description	Common-Drain Dual N-Channel MOSFET
Datasheet	SPN8206 Datasheet
Additional preview pages of the SPN8206 datasheet.

SPN8206 Product details

Description

The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V.
20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
ESD capability 2KV.
TDFN2x3-6L package design.

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Published: Jul 24, 2014 |