SPN8206 Description
The SPN8206 is the mon-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
SPN8206 Key Features
- 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V
- 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- ESD capability 2KV
- TDFN2x3-6L package design
SPN8206 Applications
- Power Management in Note book