SPN8620 - Dual N-Channel Enhancement Mode MOSFET

SYNC POWER

General Description

The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Key Features

20V/4A, RDS(ON)=12mΩ@VGS=4.5V.
20V/2A,RDS(ON) =14mΩ@VGS=2.5V.
20V/1.5A,RDS(ON)=21mΩ@VGS=1.8V.
High density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
PPAK3x3-8L.
package design PIN.

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SPN8620 dual n-channel enhancement mode mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8620
Manufacturer	SYNC POWER
File Size	280.66 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	SPN8620 Datasheet

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Full PDF Text Transcription (Reference)

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SPN8620 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8620 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  20V/4A, RDS(ON)=12mΩ@VGS=4.5V  20V/2A,RDS(ON) =14mΩ@VGS=2.5V  20V/1.5A,RDS(ON)=21mΩ@VGS=1.