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SPN8620 - Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • 20V/4A, RDS(ON)=12mΩ@VGS=4.5V.
  • 20V/2A,RDS(ON) =14mΩ@VGS=2.5V.
  • 20V/1.5A,RDS(ON)=21mΩ@VGS=1.8V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK3x3-8L.
  • package design PIN.

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Datasheet Details

Part number SPN8620
Manufacturer SYNC POWER
File Size 280.66 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN8620 Datasheet
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SPN8620 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8620 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  20V/4A, RDS(ON)=12mΩ@VGS=4.5V  20V/2A,RDS(ON) =14mΩ@VGS=2.5V  20V/1.5A,RDS(ON)=21mΩ@VGS=1.
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