SPN8622 Description
The SPN8622 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8622 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8622 Key Features
- 20V/5A, RDS(ON)=14mΩ@VGS=4.5V
- 20V/4A,RDS(ON)=18mΩ@VGS=2.5V
- 20V/4A,RDS(ON)=28mΩ@VGS=1.8V
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- PPAK3x3-8L- package design