SPN8852 Description
The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN8852 Key Features
- 150V/4.1A,RDS(ON)=88mΩ@VGS=10V
- 150V/2A,RDS(ON)=100mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- PPAK5x6-8L package design