SPN8854 Description
The SPN8854 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8854 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8854 Key Features
- 150V/68A, RDS(ON)=17 mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC