Datasheet4U Logo Datasheet4U.com

SPN8864 - N-Channel MOSFET

Description

The SPN8864 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

  • 60V/20A,RDS(ON)=6.0mΩ@VGS=10V.
  • 60V/20A,RDS(ON)=8.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPN8864
Manufacturer SYNC POWER
File Size 477.16 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8864 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPN80800R9NETN Coating Inductors DARFON
SPN8080100METL Coating Inductors DARFON
SPN8080100METN Coating Inductors DARFON
SPN8080101METN Coating Inductors DARFON
SPN8080150METL Coating Inductors DARFON

Other Datasheets by SYNC POWER

Part Number Description
SPN8868 N-Channel MOSFET
SPN8810 N-Channel MOSFET
SPN8812 N-Channel MOSFET
SPN8822 Dual N-Channel MOSFET
SPN8822A Dual N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SPN8864 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8864 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8864 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/20A,RDS(ON)=6.0mΩ@VGS=10V  60V/20A,RDS(ON)=8.0mΩ@VGS=4.
Published: |