SPN8868 Datasheet | SYNC POWER

DESCRIPTION The SPN8868 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - DC/DC Converter - Load Switch - SMPS Secondary Side Synchronous Rectifier - Power Tool - Motor Control FEATURES - 60V/95A,RDS(ON)=4.6mΩ@VGS=10V - 60V/95A,RDS(ON)=7.0mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - PPAK5x6-8L package design PIN CONFIGURATION (PPAK5x6-8L) PART MARKING 2021/10/18 Ver 01 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8868DN8RGB PPAK5x6-8L ※ SPN8868DN8RGB : 13” Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current Avalanche Energy with Single Pulse ( Tc=25℃, L = 0.1m H ) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to...