SPN8878 - N-Channel MOSFET

SYNC POWER

General Description

The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Key Features

30V/20A,RDS(ON)=12mΩ@VGS=10V.
30V/15A,RDS(ON)=17mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L package design PIN.

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SPN8878 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8878
Manufacturer	SYNC POWER
File Size	318.83 KB
Description	N-Channel MOSFET
Datasheet	SPN8878 Datasheet

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Full PDF Text Transcription (Reference)

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SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS • Power Management in Note book • Powered System • DC/DC Converter • Load Switch FEATURES  30V/20A,RDS(ON)=12mΩ@VGS=10V  30V/15A,RDS(ON)=17mΩ@VGS=4.