SPN8878B Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - Power Management in Note book - Powered System - DC/DC Converter - Load Switch Features - 30V/20A,RDS(ON)=14mΩ@VGS=10V - 30V/15A,RDS(ON)=19mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TO-252-2L and TO-251S-3L package design PIN CONFIGURATION TO-252-2L TO-251S-3L PART MARKING TO-252-2L TO-251S-3L 2020/04/30 Ver.6 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part...