SPN8878B Description
The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8878B Key Features
- 30V/20A,RDS(ON)=14mΩ@VGS=10V
- 30V/15A,RDS(ON)=19mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-252-2L and TO-251S-3L package design
SPN8878B Applications
- Power Management in Note book