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SPN9971 - N-Channel MOSFET

General Description

The SPN9971 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Key Features

  • 60V/16A,RDS(ON)=40mΩ@VGS=10V.
  • 60V/12A,RDS(ON)=45mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L/TO-251-3L package design PIN.

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Datasheet Details

Part number SPN9971
Manufacturer SYNC POWER
File Size 392.38 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9971 Datasheet

Full PDF Text Transcription for SPN9971 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN9971. For precise diagrams, and layout, please refer to the original PDF.

SPN9971 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9971 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell dens...

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mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN9971 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  60V/16A,RDS(ON)=40mΩ@VGS=10V  60V/12A,RDS(ON)=45mΩ@VGS=4.

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