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SPN9977 - N-Channel MOSFET

General Description

The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology.

Key Features

  • 60V/8A,RDS(ON)=110mΩ@VGS=10V.
  • 60V/6A,RDS(ON)=115mΩ@VGS=4.5V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L/TO-251-3L package design PIN.

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Datasheet Details

Part number SPN9977
Manufacturer SYNC POWER
File Size 345.32 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9977 Datasheet

Full PDF Text Transcription for SPN9977 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN9977. For precise diagrams, and layout, please refer to the original PDF.

SPN9977 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cel...

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mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPN9977 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS • Power Management in Note book • Powered System • DC/DC Converter • Load Switch FEATURES  60V/8A,RDS(ON)=110mΩ@VGS=10V  60V/6A,RDS(ON)=115mΩ@VGS=4.

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