SPP2305 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - -15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V - -15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V - -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V - Super high density cell design for extremely low - RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/12 Ver.5 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP2305S23RGB...