SPP2305 Description
The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPP2305 Key Features
- 15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V
- 15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V
- 15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V
- Super high density cell design for extremely low
- RDS (ON)
- Exceptional on-resistance and maximum DC current
- SOT-23-3L package design
SPP2305 Applications
- Power Management in Note book