SPP2305 Overview
Description
The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V
- 15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V
- 15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC current capability
