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SPP3403D - P-Channel MOSFET

Description

The SPP3403D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=145mΩ@VGS=-2.5V -30V/-1.0A,RDS(ON)=200mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN.

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Datasheet Details

Part number SPP3403D
Manufacturer SYNC POWER
File Size 215.42 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP3403D Datasheet
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SPP3403D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3403D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES -30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V -30V/-1.
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