SPP3481 Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter Features ‹ -30V/-5.2A,RDS(ON)= 55mΩ@VGS=- 10V ‹ -30V/-4.2A,RDS(ON)= 75mΩ@VGS=-4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TSOP-6P package design PIN CONFIGURATION(TSOP-6P) PART MARKING 2011/08/18 Ver.2 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 ORDERING INFORMATION Part Number SPP3481ST6RG SPP3481ST6RGB Package TSOP-6P TSOP-6P Part Marking 81YW 81YW Symbol D D G S D D Description Drain Drain Gate Source Drain Drain ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3481ST6RG : Tape Reel ; Pb - Free ※ SPP3481ST6RGB : Tape Reel ; Pb - Free; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -30 ±20 -5.2 -4.2 -20 -1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W ℃ ℃ ℃/W 2011/08/18 Ver.2 Page 2 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static...