SPP3481B Description
The SPP3481B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss...
SPP3481B Key Features
- 30V/-5.2A,RDS(ON)=70mΩ@VGS=-10V
- 30V/-4.2A,RDS(ON)=95mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
SPP3481B Applications
- Power Management in Note book