SPP3481B Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3481B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - -30V/-5.2A,RDS(ON)=70mΩ@VGS=-10V - -30V/-4.2A,RDS(ON)=95mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) PART MARKING 2020/02/19 Ver.3 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain ORDERING INFORMATION Part Number Package SPP3481BS26RGB SOT-23-6L...