SPP4435W Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - -30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V - -30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP- 8 package design PIN CONFIGURATION(SOP- 8) PART MARKING 2020/03/23 Ver.3 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPP4435WS8RGB SOP-8...