SPP4435W Description
The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPP4435W Key Features
- 30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V
- 30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design
SPP4435W Applications
- Power Management in Note book