SPP6307 Datasheet | SYNC POWER

DESCRIPTION The SPP6307 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Drivers : Relays/Solenoids/Lamps/Hammers - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers FEATURES - P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - ESD protected - SOT-363 package design PIN CONFIGURATION( SOT-363 ) PART MARKING 2022/09/29 Ver.4 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPP6307S36RGB SOT-363 ※ SPP6307S36RGB : Tape Reel ; Pb - Free, Halogen - Fre ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=80℃ Pulsed Drain...