SPP6309 Datasheet | SYNC POWER

Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6309 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - P-Channel -20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - ESD protected - SOT-363 (SC-70-6L) package design PIN CONFIGURATION (SOT-363/SC-70-6L) PART MARKING 2020/04/14 Ver.4 Page 1 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPP6309S36RGB...